Porous carbon/graphite

Typically used in Sic crystals growth to reduce crystal defects.
High pore uniformity.
Optimized gas transmission for higher crystal growth rate.
Concentrated pore size distribution.
Total impurities less than 1 ppm (GDMS).
Can coated with TaC to improve the resistance to Si corrosion
Can also be used for solid/gas phase separation/gas distribution in high temp.